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Newly Found Digital Memory Characteristics of Pyrrolidone‐ and Succinimide‐Based Polymers
Author(s) -
Ryu Wonyeong,
Xiang Li,
Jin Kyeong Sik,
Kim HyunJoong,
Kim HongChul,
Ree Moonhor
Publication year - 2021
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.202100186
Subject(s) - succinimide , materials science , polymer , non volatile memory , polymer chemistry , resistive random access memory , moiety , chemical engineering , chemistry , organic chemistry , electrode , optoelectronics , composite material , engineering
Abstract This study reports for the first time the excellent nonvolatile and volatile digital memory characteristics of polymers bearing 2‐pyrrolidone and succinimide moieties. A series of new polymers is synthesized from poly(ethylene‐ alt ‐maleic anhydride) and four alcohol derivatives with and without 2‐pyrrolidone and succinimide moieties. All polymers, including polyvinylpyrrolidone, are found to be thermally stable up to 195 °C or higher, and characterized regarding their molecular orbital energy levels, bandgap, and resistive digital memory behaviors. Excitingly, the polymers bearing either 2‐pyrrolidone or succinimide moiety demonstrate p‐type digital memory behaviors with high ON/OFF current ratios and long reliabilities. Nonvolatile digital memory performance is achieved over the film thickness range of 10–80 nm, whereas volatile digital memory is demonstrated over a much narrower range of film thickness. All digital memory performances can be originated from the 2‐pyrrolidone and succinimide moieties possessing high affinity and stabilization power to charges via charge traps and transformations based on a hopping conduction process. Hence, these new polymers are suitable for the production of high‐performance p‐type nonvolatile and volatile digital memory devices. Moreover, 2‐pyrrolidone and succinimide can be used as new and economical electroactive building blocks for the development of advanced digital memory materials.