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Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for n‐Type Thin‐Film Transistors
Author(s) -
Zhang Yujie,
Tang Linjing,
Sun Huiliang,
Ling Shaohua,
Yang Kun,
Uddin Mohammad Afsar,
Guo Han,
Tang Yumin,
Wang Yang,
Feng Kui,
Shi Yongqiang,
Liu Juqing,
Zhang Shiming,
Woo Han Young,
Guo Xugang
Publication year - 2019
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.201900394
Subject(s) - materials science , imide , ambipolar diffusion , copolymer , polymer , delocalized electron , oligomer , thin film transistor , polymer chemistry , electron mobility , homo/lumo , organic semiconductor , side chain , optoelectronics , molecule , electron , nanotechnology , organic chemistry , chemistry , composite material , physics , layer (electronics) , quantum mechanics
Diketopyrrolopyrrole (DPP)‐based copolymers have received considerable attention as promising semiconducting materials for high‐performance organic thin‐film transistors (OTFTs). However, these polymers typically exhibit p‐type or ambipolar charge‐transporting characteristics in OTFTs due to their high‐lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP‐based n‐type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn‐DPP show narrow band gaps as low as 1.27 eV and gradually down‐shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well‐delocalized π‐system, and favorable polymer chain packing, the optimal polymer in the series shows promising n‐type charge transport with an electron mobility up to 0.48 cm 2 V −1 s −1 in OTFTs, which is among the highest values for the DPP‐based n‐type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high‐performance n‐type polymeric semiconductors.