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Improved Thin‐Film Transistor Performance Through a Melt of Poly(para‐phenyleneethynylene)
Author(s) -
Schmid Stefanie,
Kast Anne K.,
Schröder Rasmus R.,
Bunz Uwe H. F.,
Melzer Christian
Publication year - 2014
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.201400203
Subject(s) - materials science , threshold voltage , thin film transistor , annealing (glass) , transistor , thin film , optoelectronics , field effect transistor , voltage , nanotechnology , composite material , electrical engineering , layer (electronics) , engineering
The performance of polymer field‐effect transistors (PFETs) based on short rigid rod semiconducting poly(2,5‐didodecyloxy‐ p ‐phenyleneethynylene) (D‐OPPE) is highlighted. The controlled heating and cooling of thin films of D‐OPPE allows for a recrystallization from the melt, boosting the performance of D‐OPPE‐based transistors. The improved film properties induced by controlled annealing lead to a hole field‐effect mobility around 0.014 cm 2 V −1 s −1 , an on/off ratio of 10 6 , a sub‐threshold swing of 3 V dec −1 and a threshold voltage of −35 V, employing a poly(methyl methacrylate) (PMMA) gate dielectric. Thus, PFETs out of D‐OPPE compete now with spin‐coated, polycrystalline poly(3‐hexylthiophene)‐based PFETs.