Premium
Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure
Author(s) -
Jo Hanju,
Ko Jieun,
Lim Jung Ah,
Chang Hye Jung,
Kim Youn Sang
Publication year - 2013
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.201200614
Subject(s) - materials science , copolymer , nanostructure , resistive random access memory , methyl methacrylate , fullerene , composite number , polystyrene , chemical engineering , polymer , nanotechnology , electrode , composite material , organic chemistry , chemistry , engineering
Organic nonvolatile resistive switching memory is developed via selective incorporation of fullerene derivatives, [6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM), into the nanostructure of self‐assembled poly(styrene‐b‐methyl methacrylate) (PS 10 ‐b‐PMMA 130 ) diblock copolymer. PS 10 ‐b‐PMMA 130 diblock copolymer provides a spatially ordered nanotemplate with a 10‐nm PS nanosphere domain surrounded by a PMMA matrix. Spin casting of the blend solution of PS 10 ‐b‐PMMA 130 and PCBM spontaneously forms smooth films without PCBM aggregation in which PCBM molecules are incorporated within a PS nanosphere domain of PS 10 ‐b‐PMMA 130 nanostructure by preferential intermixing propensity of PCBM and PS. Based on the well‐defined PS 10 ‐b‐PMMA 130 /PCBM nanostructure, resistive random access memory (ReRAM) exhibits significantly improved bipolar‐switching behavior with stable and reproducible properties at low operating voltages (RESET at 1.3 V and SET at −1.5 V) under ambient conditions. Finally, flexible memory devices are achieved using a nanostructured PS 10 ‐b‐PMMA 130 /PCBM composite in which no significant degradation of electrical properties is observed before and after bending.