Premium
Surface Coatings Based on Polysilsesquioxanes: Solution‐Processible Smooth Hole‐Injection Layers for Optoelectronic Applications
Author(s) -
Kessler Daniel,
Lechmann Maria C.,
Noh Seunguk,
Berger Rüdiger,
Lee Changhee,
Gutmann Jochen S.,
Theato Patrick
Publication year - 2009
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200900196
Subject(s) - materials science , surface (topology) , optoelectronics , composite material , nanotechnology , chemical engineering , engineering , mathematics , geometry
Optoelectronic devices usually consist of a transparent conductive oxide (TCO) as one electrode. Interfacial engineering between the TCO electrode and the overlying organic layers is an important method for tuning device performance. We introduce poly(methylsilsesquioxane)–poly( N , N ‐di‐4‐methylphenylamino styrene) (PMSSQ–PTPA) as a potential hole‐injection layer forming material. Spin‐coating and thermally induced crosslinking resulted in an effective planarization of the anode interface. HOMO level (−5.6 eV) and hole mobility (1 × 10 −6 cm 2 · Vs −1 ) of the film on ITO substrates were measured by cyclovoltammetry and time‐of‐flight measurement demonstrating the hole injection capability of the layer. Adhesion and stability for further multilayer built‐up could be demonstrated. Contact angle measurements and tape tests after several solvent treatments proved the outstanding film stability.