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One‐Step Growth of ca. 2–15 nm Polymer Thin Films on Hydrogen‐Terminated Silicon
Author(s) -
Blake Robert B.,
Pei Lei,
Yang Li,
Lee Michael V.,
Conley Hiram J.,
Davis Robert C.,
Shirahata Naoto,
Linford Matthew R.
Publication year - 2008
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200700752
Subject(s) - polymer , monomer , materials science , dangling bond , silicon , wetting , ellipsometry , x ray photoelectron spectroscopy , polymer chemistry , reactivity (psychology) , thin film , hydrogen bond , chemical engineering , nanotechnology , chemistry , molecule , organic chemistry , composite material , pathology , medicine , alternative medicine , engineering , metallurgy
Abstract Here we show direct polymer growth on hydrogen‐terminated silicon (SiH) as a one‐step process. SiH is immersed in a heated solution of an initiator, a monomer, and a crosslinker. The resulting polymer films are 2–15 nm thick, the thickness can be tuned by varying reaction conditions, and the polymer films are robust. Thinner films are obtained in polymer growth without crosslinker. Radicals produced by the initiator and in growing polymer chains may pluck H atoms from SiH to make reactive dangling bonds. These in turn appear to react with monomers and crosslinkers. Crosslinkers tethered through one double bond may be grafted into polymer chains growing in solution. Surface reactivity is demonstrated by optical ellipsometry, X‐ray photoelectron spectroscopy, atomic force microscopy, and wetting.