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A New Concept for an Alkaline Developable Positive‐Tone Resist: Molecular Resist Utilizing Acid Catalyzed Isomerization from Oxabenzonorbornadiene to Naphthol
Author(s) -
Mori Hajime,
Nomura Eisaku,
Hosoda Asao,
Miyake Yasuhito,
Taniguchi Hisaji
Publication year - 2008
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200700604
Subject(s) - resist , photoresist , materials science , wafer , lithography , electron beam lithography , amorphous solid , nanotechnology , moiety , catalysis , isomerization , polymer chemistry , chemistry , optoelectronics , crystallography , organic chemistry , layer (electronics)
A novel positive‐tone molecular resist possessing oxabenzonorbornadiene moiety was developed for electron‐beam (EB) lithography. The synthesized resist material showed relatively high glass transition temperature and readily formed uniform amorphous films on a silicon wafer. The sensitivity of an EB resist was ca. 8 µC · cm −2 and line and space patterns of 200 nm could be fabricated. The promising feature of the resist materials is that no outgassed products from base matrixes are theoretically produced under the exposure and post‐exposure bake procedure.