Novel Molecular Resist Based on a First Generation Dendrimer Possessing Furan Rings | Zendy

Mori Hajime | Zendy; Nomura Eisaku | Zendy; Hosoda Asao | Zendy; Miyake Yasuhito | Zendy; Taniguchi Hisaji | Zendy

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Novel Molecular Resist Based on a First Generation Dendrimer Possessing Furan Rings

Author(s) -

Mori Hajime,

Nomura Eisaku,

Hosoda Asao,

Miyake Yasuhito,

Taniguchi Hisaji

Publication year - 2006

Publication title -

macromolecular rapid communications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.348

H-Index - 154

eISSN - 1521-3927

pISSN - 1022-1336

DOI - 10.1002/marc.200600454

Subject(s) - resist , electron beam lithography , dendrimer , materials science , lithography , furan , scanning electron microscope , nanotechnology , optics , polymer chemistry , chemistry , optoelectronics , composite material , physics , organic chemistry , layer (electronics)

Summary: A novel chemically amplified negative‐tone molecular resist for electron‐beam (EB) lithography was developed. The base matrix had six furan rings as a reactive functional group at its terminal. The resist containing the matrix, a crosslinker and a photoacid generator worked well as a negative‐tone resist with high sensitivity (3 µC · cm −2 ). Line and space patterns (1:2) of 200 nm could be fabricated.SEM image of negative‐tone line and space patterns for the resist film formulated with G1‐dendrimer 5 .

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