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Low‐Voltage All‐Polymer Field‐Effect Transistor Fabricated Using an Inkjet Printing Technique
Author(s) -
Liu Yi,
Varahramyan Kody,
Cui Tianhong
Publication year - 2005
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200500493
Subject(s) - materials science , polymer , schematic , subthreshold slope , field effect transistor , transistor , organic field effect transistor , electrode , dielectric , threshold voltage , optoelectronics , voltage , composite material , electrical engineering , chemistry , engineering
Summary: An all‐polymer field‐effect transistor (FET) fabricated using an inkjet printing technique is presented in this paper. Poly(3,4‐ethylenedioxythiophene) works as the source/drain/gate electrode material because of its good conductivity. Polypyrrole acts as the semiconducting layer. Poly(vinyl pyrrolidone) K60, an insulating polymer with a dielectric constant of 60, operates as the dielectric layer. All the polymers are diluted with deionized water, and can be printed with a piezoelectric inkjet printing system. The device functions at a depletion mode with low operation voltage. It has a field‐effect mobility of 0.1 cm 2 · V −1 · s −1 , an on/off ratio of 2.9 × 10 3 , and a subthreshold slope of 2.81 V · decade −1 .Schematic of the all‐polymer FET synthesized here.