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Novel Photobleachable Deep UV Resists Based on Single Component Nonchemically Amplified Resist System
Author(s) -
Kim JinBaek,
Kim KyoungSeon
Publication year - 2005
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200500317
Subject(s) - resist , methacrylate , scanning electron microscope , polymer , materials science , copolymer , irradiation , polystyrene , polymer chemistry , photochemistry , chemistry , nanotechnology , composite material , physics , layer (electronics) , nuclear physics
Summary: Photobleachable deep UV resists were designed by introducing diazoketo groups in polymer side chains. The diazoketo groups undergo the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base‐soluble photoproducts. The polymers were synthesized by radical copolymerization of 2‐(2‐diazo‐3‐oxo‐butyryloxy)‐ethyl methacrylate, 2‐hydroxyethyl methacrylate, and γ ‐butyrolacton‐2‐yl methacrylate. The single component resist showed 0.7 µm line and space patterns using a mercury‐xenon lamp in a contact printing mode.Scanning electron micrograph of 0.7 µm line and space patterns printed with polymer B at a dose of 70 mJ · cm −2 .