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Combinatorial Growth and Analysis of the Transparent Conducting Oxide ZnO/In (IZO)
Author(s) -
Taylor Matthew P.,
Readey Dennis W.,
Teplin Charles W.,
van Hest Maikel F. A. M.,
Alleman Jeff L.,
Dabney Matthew S.,
Gedvilas Lynn M.,
Keyes Brian M.,
To Bobby,
Parilla Philip A.,
Perkins John D.,
Ginley David S.
Publication year - 2004
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200300231
Subject(s) - indium , conductivity , transmittance , materials science , oxide , doping , zinc , sputter deposition , indium tin oxide , electrical resistivity and conductivity , transparent conducting film , layer (electronics) , sputtering , analytical chemistry (journal) , chemical engineering , thin film , optoelectronics , nanotechnology , chemistry , metallurgy , physics , chromatography , quantum mechanics , engineering
Summary: Compositionally graded, combinatorial libraries of indium‐doped zinc oxide (IZO) were grown by DC‐magnetron sputtering on glass at 100 °C. The In content ranged from 5 to 50 cation‐%. The highest conductivity, σ = 2 000 Ω −1 · cm −1 with μ = 25 cm 2 · V −1 · s −1 , was found at ≈50% In content with a visible transmittance greater than 80%. The (00 l ) layer spacing increased from ≈2.6 to 2.85 Å as the In content increased from 5 to 50%.Conductivity as a function of indium content for the three In‐Zn‐O transparent conducting oxide libraries studied here.