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High‐Throughput Chemical Vapor Deposition System and Thin‐Film Silicon Library
Author(s) -
Wang Qi,
Liu Fengzhen,
Han Daxing
Publication year - 2004
Publication title -
macromolecular rapid communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 154
eISSN - 1521-3927
pISSN - 1022-1336
DOI - 10.1002/marc.200300151
Subject(s) - silane , thin film , chemical vapor deposition , materials science , silicon , deposition (geology) , amorphous solid , microcrystalline , schematic , chemical engineering , amorphous silicon , dilution , hydrogen , nanotechnology , crystalline silicon , optoelectronics , chemistry , organic chemistry , composite material , electronic engineering , crystallography , physics , paleontology , sediment , engineering , biology , thermodynamics
Summary: Thin‐film Si materials library were fabricated rapidly on glass substrates using the combinatorial hot‐wire CVD technique. We found that the films with high hydrogen dilution become microcrystalline Si, and the films with no and low hydrogen dilution remain in the amorphous Si structure. We also found that the ratio of hydrogen to silane (R) is a good measure of the structure change.Schematics of a combinatorial HWCVD system.