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Improving the Stability of R2R Printed 1‐Bit Code Generator through Spin‐Coated Multilayer‐Encapsulation Method
Author(s) -
Jung Younsu,
Kale Amol Marotrao,
Park Jinwha,
Park Hyejin,
Sun Junfeng,
Koirala Gyan Raj,
Shrestha Kiran,
Shrestha Sagar,
Parajuli Sajjan,
Maskey Bijendra Bishow,
Cho Gyoujin
Publication year - 2020
Publication title -
macromolecular materials and engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 96
eISSN - 1439-2054
pISSN - 1438-7492
DOI - 10.1002/mame.201900867
Subject(s) - materials science , cmos , transistor , optoelectronics , nanotechnology , printed electronics , encapsulation (networking) , electrical engineering , voltage , inkwell , computer science , composite material , computer network , engineering
Roll‐to‐roll (R2R) printed electronic devices have great advantages for developing large scale flexible and disposable devices when compared to current Si‐based technology. For practical realization of these advantages, however, R2R printed devices need to surmount device functionality limitations, most urgently high‐power dissipation and poor device stability. To resolve both imperative challenges at once, herein, an all R2R printed complementary metal‐oxide‐semiconductor (CMOS) 1‐bit code generator with spin‐coated multilayer encapsulation method is developed. In order to print CMOS devices by an all‐R2R gravure printing method, electrical amphoteric property of the single walled carbon nanotube (SWCNT) is utilized to fabricate both p‐type and n‐type SWCNT based thin film transistors (TFTs). In addition, printable encapsulating polymeric materials (CYTOP and FG‐3650) are developed to effectively prevent H 2 O permeation. The resulting CMOS 1‐bit code generator is able to continuously operate for 2 h under ambient conditions without any variation in output voltage and frequency.