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Abnormal Carrier Dynamics of Non‐Doped “P‐Type” Poly( N ‐vinylcarbazole)
Author(s) -
Cai HaiTong,
Li Jie,
Yang ZhiYao,
Wang Cheng,
Tang Chao,
Ye ShangHui,
Lai WenYong,
Huang Wei
Publication year - 2020
Publication title -
macromolecular chemistry and physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.57
H-Index - 112
eISSN - 1521-3935
pISSN - 1022-1352
DOI - 10.1002/macp.202000329
Subject(s) - ambipolar diffusion , doping , semiconductor , electric field , relaxation (psychology) , polymer , electron , dielectric spectroscopy , materials science , chemical physics , electron mobility , charge carrier , condensed matter physics , dispersion (optics) , chemistry , optoelectronics , physics , optics , electrochemistry , quantum mechanics , psychology , social psychology , electrode , composite material
Considering the basic concepts of P‐type and N‐type originated from inorganic semiconductors, it has been deduced in this report that the non‐doped polymer semiconductors should be ambipolar materials. Thus, the carrier dynamics of hole‐only and electron‐only devices of poly( N ‐vinylcarbazole) (PVK) are researched through impedance spectroscopy. The results show that the hole and electron transports both possess high dispersion with parameter of 0.1–0.2 and 0.1, respectively. In addition, the hole and electron mobilities under different electric field are basically in the same order of magnitude, which shows that PVK is one intrinsically ambipolar polymer semiconductor although it is traditionally thought to “P‐type.” Finally, the abnormal negative slope phenomenon of transferring curve is analyzed, which is ascribed to the energy relaxation through vibration in polymer segment.