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Coplanar Donor–Acceptor Semiconducting Copolymers to Achieve Better Conjugated Structures: Side‐Chain Engineering
Author(s) -
Pei Mingyuan,
Kim JiHoon,
On Sungmin,
Lee HanKoo,
Cho Kilwon,
Hwang DoHoon,
Yang Hoichang
Publication year - 2017
Publication title -
macromolecular chemistry and physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.57
H-Index - 112
eISSN - 1521-3935
pISSN - 1022-1352
DOI - 10.1002/macp.201700135
Subject(s) - copolymer , side chain , conjugated system , materials science , polymer chemistry , alkyl , electron mobility , substituent , polymer , acceptor , chemistry , stereochemistry , organic chemistry , composite material , optoelectronics , physics , condensed matter physics
It is reported on the allocation effects of branched alkyl chains, when used as solubility and ordering enhancers of the conjugated donor–accepter ( D – A ) copolymer backbones, on the ordering and π–π overlapping of the copolymers, that drastically affect the electrical properties of organic field‐effect transistors (OFETs). Triisopropylsilylethynyl‐benzo[1,2‐ b :4,5‐ b ′]dithiophene (TIPSBDT) and diketopyrrolopyrrole (DPP)‐based copolymers, which have two linear alkyl spacers (methylene ( C 1) or butylene ( C 4)) between the DPP and side‐substituent (C 10 H 21 )CH(C 8 H 17 ), are synthesized by Suzuki cross‐coupling. These copolymer films are spun cast onto a polymer‐treated SiO 2 dielectric surface, and some are further thermally annealed. The longer spacer, C 4, is found to efficiently enhance the coplanarity and conjugation of the D – A backbone, while the C 1 does not. The resulting C 4‐bridged TIPSBDT‐DPP‐based copolymer readily develops a superior π‐extended layer on the dielectric surface; the edge‐on chains with randomly oriented side chains can be closely packed with a short π‐planar distance ( d (010) ) of 3.57 Å. Its properties are superior to those of the short spacer C 1 system with d (010) ≈3.93 Å. The C 4‐bridged TIPSBDT‐DPP copolymer films yield a field‐effect mobility up to 1.2 cm 2 V −1 s −1 in OFETs, 12 times as higher than that of the C 1 spacer system.