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High‐Performance FETs Prepared From Electrospun Aligned P4TDPP Nanofibers
Author(s) -
Lin Chih Jung,
Hsu Jung Ching,
Tsai Jung Hsun,
Kuo Chi Ching,
Lee Wen Ya,
Chen Wen Chang
Publication year - 2011
Publication title -
macromolecular chemistry and physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.57
H-Index - 112
eISSN - 1521-3935
pISSN - 1022-1352
DOI - 10.1002/macp.201100434
Subject(s) - nanofiber , crystallinity , materials science , polythiophene , conjugated system , polymer chemistry , chemical engineering , polymer , electrospinning , morphology (biology) , nanotechnology , conductive polymer , composite material , biology , engineering , genetics
The morphology and charge transport characteristics of electrospun aligned nanofibers based on the 2D conjugated polythiophene derivative P4TDPP are studied. The crystallinity, orientation, and molecular packing of P4TDPP nanofibers are significantly enhanced by a crystalline‐induced technique. P4TDPP nanofiber transistors exhibit a high hole mobility of 0.305 cm 2 V −1 s −1 and on/off ratio of 1.30 × 10 5 , which is significantly higher than that of the corresponding spin‐coated film (2.10 × 10 −2 cm 2 V −1 s −1 ). The experimental results suggest that high‐performance FETs can be obtained from electrospun aligned nanofibers of crystalline conjugated polymers.