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Poly(2‐vinylnaphthalene) ‐block‐ poly(acrylic acid) Block Copolymer: Self‐Assembled Pattern Formation, Alignment, and Transfer into Silicon via Plasma Etching
Author(s) -
Zhang Xin,
Metting Christopher J.,
Briber Robert M.,
Weilnboeck Florian,
Shin Sang Hak,
Jones Benjamin G.,
Oehrlein Gottlieb S.
Publication year - 2011
Publication title -
macromolecular chemistry and physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.57
H-Index - 112
eISSN - 1521-3935
pISSN - 1022-1352
DOI - 10.1002/macp.201100232
Subject(s) - copolymer , lamellar structure , materials science , acrylic acid , polymer chemistry , etching (microfabrication) , silicon , polymer , acetone , chemical engineering , dry etching , polyelectrolyte , reactive ion etching , nanotechnology , chemistry , composite material , optoelectronics , organic chemistry , layer (electronics) , engineering
P2VN‐ b ‐PAA is a novel diblock copolymer which has potential as a self‐assembled nanoscale patterning material. Thin spin cast P2VN‐ b ‐PAA films rapidly reorganize to vertical lamellar with exposure to acetone vapor. P2VN‐ b ‐PAA lamellar morphology was aligned by electric field under acetone vapor at a significantly faster rate and at lower electric field strengths than other polymer systems. Observed dry etching selectivity for P2VN to PAA were comparatively high for a variety of etch gases, consistent with estimations from Ohnishi and ring parameters. Block copolymer self assembled patterns were transferred to silicon via two‐step CF 4 and SF 6 etching.