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The development of silicon‐containing oxides during the oxidation of iron‐chromium‐base alloys
Author(s) -
Stott F. H.,
Gabriel G. J.,
Wei F. I.,
Wood G. C.
Publication year - 1987
Publication title -
materials and corrosion
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 55
eISSN - 1521-4176
pISSN - 0947-5117
DOI - 10.1002/maco.19870380910
Subject(s) - silicon , spallation , materials science , aluminium , layer (electronics) , alloy , chromium , metallurgy , isothermal process , amorphous solid , getter , chemical engineering , composite material , chemistry , crystallography , physics , optoelectronics , quantum mechanics , neutron , engineering , thermodynamics
The influence of silicon on the oxidation of Fe‐14% Cr and Fe‐28% Cr has been studied at high temperature, with particular emphasis on the development and nature of the healing SiO 2 layer. In general, silicon is a less effective addition than aluminium to these alloys in improving oxidation resistance because SiO 2 grows at a lower rate than α‐Al 2 O 3 . Hence, silicon is a less successful oxygen secondary getter and development of a complete healing layer of SiO 2 is less rapid than that of α‐Al 2 O 3 on a corresponding aluminium‐containing alloy. Nonetheless, the addition of only 1% Si to Fe‐28% Cr causes a marked reduction in the overall oxidation rate, particularly by facilitating development of the Cr 2 O 3 scale. Precipitates of SiO 2 form at the alloy/scale interface. These grow inwards and laterally until they eventually link up to establish a continuous healing layer at the interface after several hundred hours exposure at 1000°C. Similar features are observed for Fe‐14% Cr‐3% Si but the healing SiO 2 layer develops after a much shorter time for Fe‐14% Cr‐10% Si, due to the high silicon availability. In every case, the healing layer has been shown to be amorphous SiO 2 . Although this phase is very protective during isothermal oxidation, it is a site of weakness during cooling and scale spallation is very extensive from specimens where the SiO 2 is continuous, with failure occurring cohesively within that layer. Ion implantation of silicon into Fe‐14% Cr and Fe‐28% Cr gives a reduced oxidation rate due to facilitation of a more rapid establishment of a Cr 2 O 3 scale. Similar implantation of yttrium into the ternary alloys assists in development of the silicon‐containing oxide layer, possibly associated with an influence on the nucleation of the oxide precipitates in the early stages of exposure.