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In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities
Author(s) -
Chambonneau Maxime,
Grojo David,
Tokel Onur,
Ilday Fatih Ömer,
Tzortzakis Stelios,
Nolte Stefan
Publication year - 2021
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.202100140
Subject(s) - femtosecond , laser , materials science , silicon , picosecond , nanosecond , optoelectronics , semiconductor , surface modification , dielectric , nanotechnology , engineering physics , optics , mechanical engineering , physics , engineering
Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.