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Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe 2
Author(s) -
Wang Lei,
Zhang Saifeng,
McEvoy Niall,
Sun Yiyang,
Huang Jiawei,
Xie Yafeng,
Dong Ningning,
Zhang Xiaoyan,
Kislyakov Ivan M.,
Nunzi JeanMichel,
Zhang Long,
Wang Jun
Publication year - 2019
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201900052
Subject(s) - semiconductor , graphene , ultrashort pulse , materials science , band gap , nanophotonics , optoelectronics , semimetal , nonlinear system , nonlinear optics , nanotechnology , laser , optics , physics , quantum mechanics
Abstract The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1–2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra‐broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, PtSe 2 shows much better air stability than its analogue, black phosphorous. In this work, the superior nonlinear optical performance and ultrafast dynamics of layered PtSe 2 , and signatures of the transition from semiconductor to semimetal are systematically studied. Combining with rate equations, first‐principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.