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1305 nm Few‐Layer MoTe 2 ‐on‐Silicon Laser‐Like Emission
Author(s) -
Fang Hanlin,
Liu Jin,
Li Hongji,
Zhou Lidan,
Liu Lin,
Li Juntao,
Wang Xuehua,
Krauss Thomas F.,
Wang Yue
Publication year - 2018
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201800015
Subject(s) - silicon , materials science , optoelectronics , laser , layer (electronics) , hybrid silicon laser , silicon photonics , photonics , chemical vapor deposition , substrate (aquarium) , optics , nanotechnology , physics , oceanography , geology
The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser‐like emission is reported that employs few‐layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe 2 ) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe 2 ‐on‐silicon laser‐like emission at 1305 nm, i.e. in the center of the “O‐band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm 2 . The surprising insight is that, contrary to common understanding, a monolayer MoTe 2 is not required to achieve higher efficiency laser‐like operation. Instead, few‐layer MoTe 2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few‐layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D‐on‐silicon devices a step closer to becoming a scalable technology.