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Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm
Author(s) -
Kumari Sulakshna,
Haglund Emanuel P.,
Gustavsson Johan S.,
Larsson Anders,
Roelkens Gunther,
Baets Roel G.
Publication year - 2018
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201700206
Subject(s) - materials science , lasing threshold , optics , grating , waveguide , optoelectronics , laser , silicon , wavelength , transverse mode , silicon nitride , physics
A continuous‐wave electrically‐pumped short‐wavelength hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in‐plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 µm oxide‐aperture diameter device with a threshold current of 1.1 mA produces 73 µW single‐sided waveguide‐coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side‐mode suppression ratio (SMSR) of 29 dB.