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Efficient and long‐life green light‐emitting diodes comprising tridentate thiol capped quantum dots
Author(s) -
Li Zhaohan,
Hu Yongxiang,
Shen Huaibin,
Lin Qingli,
Wang Lei,
Wang Hongzhe,
Zhao Weili,
Li Lin Song
Publication year - 2017
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201600227
Subject(s) - quantum dot , light emitting diode , quantum efficiency , photoluminescence , materials science , optoelectronics , diode , green light , luminance , luminous efficacy , layer (electronics) , optics , nanotechnology , physics , blue light
In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W –1 and 70.1 cd A –1 , respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.