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Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon
Author(s) -
Volet Nicolas,
Spott Alexander,
Stanton Eric J.,
Davenport Michael L.,
Chang Lin,
Peters Jon D.,
Briles Travis C.,
Vurgaftman Igor,
Meyer Jerry R.,
Bowers John E.
Publication year - 2017
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201600165
Subject(s) - optoelectronics , materials science , amplifier , photonics , optical amplifier , chip , bandwidth (computing) , wavelength , silicon photonics , optical power , semiconductor , silicon , photonic integrated circuit , optics , fabrication , substrate (aquarium) , cmos , electrical engineering , physics , telecommunications , laser , computer science , engineering , medicine , oceanography , alternative medicine , pathology , geology
A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.