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Lasing of Nd 3+ in sapphire
Author(s) -
Waeselmann Sven H.,
Heinrich Sebastian,
Kränkel Christian,
Huber Günter
Publication year - 2016
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201500319
Subject(s) - sapphire , lasing threshold , materials science , doping , laser , neodymium , epitaxy , optoelectronics , slope efficiency , pulsed laser deposition , optics , analytical chemistry (journal) , thin film , fiber laser , layer (electronics) , wavelength , nanotechnology , chemistry , physics , chromatography
We present a rare‐earth‐doped sapphire laser. Single‐crystalline α‐Al 2 O 3 films doped with trivalent neodymium have been grown by pulsed laser deposition on undoped sapphire substrates. The Nd 3+ doping concentrations of the films have been varied between 0.3 at.% and 2 at.%. Epitaxial growth was proven by structural and optical characterization of the films. The samples exhibit strongly polarization dependent emission transitions from the 4 F 3/2 manifold with a fluorescence lifetime of 108 μs and peak emission cross sections of 1.1 × 10 −18 cm 2 around 1100 nm. Lasing at 1096.5 nm was achieved under Ti:sapphire‐pumping in a planar waveguide configuration with a maximum cw output power of 137 mW and a slope efficiency of 7.5% with respect to the incident pump power.