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A localized surface plasmon resonance and light confinement‐enhanced near‐infrared light photodetector
Author(s) -
Lu Rui,
Ge CaiWang,
Zou YiFeng,
Zheng Kun,
Wang DanDan,
Zhang TengFei,
Luo LinBao
Publication year - 2016
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201500179
Subject(s) - optoelectronics , materials science , photodetector , responsivity , photocurrent , surface plasmon resonance , plasmon , indium tin oxide , germanium , surface plasmon , infrared , optics , nanoparticle , nanotechnology , layer (electronics) , silicon , physics
Abstract Light manipulation is paramountly important to the fabrication of high‐performance optoelectronic devices such as solar cells and photodetectors. In this study, a high‐performance near‐infrared light nanophotodetector (NIRPD) was fabricated based on a germanium nanoneedles array (GeNNs array) with strong light confining capability, and single‐layer graphene (SLG) modified with heavily doped indium tin oxide nanoparticles (ITONPs), which were capable of inducing localized surface plasmon resonance (LSPR) under NIR irradiation. An optoelectronic study shows that after modification with ITONPs the device performance including photocurrent, responsivity and detectivity was considerably improved. In addition, the ITONPs@SLG/GeNNs array NIRPD was able to monitor fast‐switching optical signals, the frequency was as high as 1 MHz, with very fast response rates. Theoretical simulations based on finite‐element method (FEM) revealed that the observed high performance was not only due to the strong light‐confining capability of the GeNNs array, but also due to the plasmonic ITONPs‐induced hot electron injection. The above results suggest that the present NIRPD will have great potential in future optoelectronic devices application.