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Quantum dot materials for terahertz generation applications
Author(s) -
Leyman Ross R.,
Gorodetsky Andrei,
Bazieva Natalia,
Molis Gediminas,
Krotkus Arūnas,
Clarke Edmund,
Rafailov Edik U.
Publication year - 2016
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201500176
Subject(s) - terahertz radiation , quantum dot , optoelectronics , quantum dot laser , semiconductor , photomixing , materials science , terahertz gap , laser , quantum well , semiconductor laser theory , terahertz spectroscopy and technology , ultrashort pulse , optics , physics , far infrared laser , terahertz metamaterials
Compact and tunable semiconductor terahertz sources providing direct electrical control, efficient operation at room temperatures and device integration opportunities are of great interest at the present time. One of the most well‐established techniques for terahertz generation utilises photoconductive antennas driven by ultrafast pulsed or dual‐wavelength continuous wave laser systems, though some limitations, such as confined optical wavelength pumping range and thermal breakdown, still exist. The use of quantum dot‐based semiconductor materials, having unique carrier dynamics and material properties, can help to overcome limitations and enable efficient optical‐to‐terahertz signal conversion at room temperatures. Here we discuss the construction of novel and versatile terahertz transceiver systems based on quantum dot semiconductor devices. Configurable, energy‐dependent optical and electronic characteristics of quantum‐dot‐based semiconductors are described, and the resonant response to optical pump wavelength is revealed. Terahertz signal generation and detection at energies that resonantly excite only the implanted quantum dots opens the potential for using compact quantum dot‐based semiconductor lasers as pump sources. Proof‐of‐concept experiments are demonstrated here that show quantum dot‐based samples to have higher optical pump damage thresholds and reduced carrier lifetime with increasing pump power.