Premium
Transfer printing of fully formed thin‐film microscale GaAs lasers on silicon with a thermally conductive interface material
Author(s) -
Sheng Xing,
Robert Cedric,
Wang Shuodao,
Pakeltis Grace,
Corbett Brian,
Rogers John A.
Publication year - 2015
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201500016
Subject(s) - materials science , microscale chemistry , optoelectronics , transfer printing , lasing threshold , wafer , laser , silicon , semiconductor , photonics , fabrication , hybrid silicon laser , electrical conductor , epitaxy , nanotechnology , optics , layer (electronics) , composite material , wavelength , medicine , mathematics education , mathematics , physics , alternative medicine , pathology
High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.