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InGaN/GaN dot‐in‐a‐wire: ultimate terahertz nanostructure
Author(s) -
Sun Guan,
Chen Ruolin,
Ding Yujie J.,
Nguyen Hieu P. T.,
Mi Zetian
Publication year - 2015
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201400138
Subject(s) - terahertz radiation , quantum dot , optoelectronics , nanowire , materials science , photoluminescence , nanostructure , quantum wire , dipole , quantum , nanotechnology , physics , quantum mechanics
The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.