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Frontispiece: 4H‐SiC: a new nonlinear material for midinfrared lasers
Publication year - 2013
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201370058
Subject(s) - laser , materials science , optoelectronics , broadband , optics , semiconductor laser theory , nonlinear optics , semiconductor , nonlinear system , physics , quantum mechanics
Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Shunchong Wang et al. (pp. 831–838) demonstrate a new nonlinear material 4H‐SiC for producing midinfrared laser. Broadband midinfrared laser ranging from 3.90 to 5.60 μm is generated in 4H‐SiC by phasematched difference‐frequency generation for the first time. The results may open a door to practically utilize wide bandgap semiconductors with high laser damage thresholds as nonlinear optical materials for high power output of midinfrared lasers.