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Low‐loss aluminium nitride thin film for mid‐infrared microphotonics
Author(s) -
Lin Pao Tai,
Jung Hojoong,
Kimerling Lionel C.,
Agarwal Anu,
Tang Hong X.
Publication year - 2014
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201300176
Subject(s) - materials science , beam splitter , optoelectronics , infrared , nitride , thin film , silicon nitride , splitter , optics , aluminium , photonics , sputtering , silicon , layer (electronics) , nanotechnology , physics , laser , metallurgy
Mid‐infrared (mid‐IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y‐junction beam splitters are developed on thin films of CMOS‐compatible sputter deposited aluminum nitride (AlN)‐on‐silicon. An optical loss of 0.83 dB/cm at λ = 2.5 µm is achieved. In addition, an efficient mid‐IR 50:50 beam splitter is demonstrated over 200 nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra‐wide transparent window (ultraviolent to mid‐IR), our AlN mid‐IR platform can enable broadband optical networks on a chip.