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4H‐SiC: a new nonlinear material for midinfrared lasers
Author(s) -
Wang Shunchong,
Zhan Minjie,
Wang Gang,
Xuan Hongwen,
Zhang Wei,
Liu Chunjun,
Xu Chunhua,
Liu Yu,
Wei Zhiyi,
Chen Xiaolong
Publication year - 2013
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201300068
Subject(s) - laser , optoelectronics , materials science , broadband , optics , radiation , semiconductor , semiconductor laser theory , nonlinear optics , physics
Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Here, a new nonlinear material 4H‐SiC is demonstrated for producing MIR laser. Broadband MIR radiation ranging from 3.90 to 5.60 μm is generated in 4H‐SiC by phase‐matched difference‐frequency generation for the first time. The results may open a door to practically utilize wide‐bandgap semiconductors with high laser damage thresholds as NLO materials for high power output of MIR lasers.