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Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy
Author(s) -
Maiwald Martin,
Fricke Jörg,
Ginolas Arnim,
Pohl Johannes,
Sumpf Bernd,
Erbert Götz,
Tränkle Günther
Publication year - 2013
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201300041
Subject(s) - materials science , laser , raman spectroscopy , optoelectronics , optics , wavelength , diode , excitation , spectroscopy , distributed bragg reflector , physics , quantum mechanics
A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm −1 ) and a mean spectral distance of 0.46 nm (10.2 cm −1 ) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).