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High‐power HgGa 2 S 4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz
Author(s) -
Tyazhev Aleksey,
Marchev Georgi,
Badikov Valeriy,
EstebanMartin Adolfo,
Badikov Dmitrii,
Panyutin Vladimir,
Shevyrdyaeva Galina,
Sheina Svetlana,
Fintisova Anna,
Petrov Valentin
Publication year - 2013
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201300023
Subject(s) - optical parametric oscillator , materials science , crystal (programming language) , power (physics) , energy conversion efficiency , optoelectronics , parametric statistics , optics , optical pumping , nonlinear optics , optical parametric amplifier , laser , physics , optical amplifier , computer science , wavelength , statistics , mathematics , quantum mechanics , programming language
The defect chalcopyrite crystal HgGa 2 S 4 has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS 2 crystal, operation of the 1064‐nm pumped HgGa 2 S 4 OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.