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Time‐resolved reconstruction of defect creation sequences in diode lasers
Author(s) -
Hempel M.,
Tomm J.W.,
Hortelano V.,
Michel N.,
Jim J.,
Krakowski M.,
Elsaesser T.
Publication year - 2012
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201200039
Subject(s) - diode , laser , materials science , resistive touchscreen , optoelectronics , power (physics) , optics , semiconductor laser theory , computer science , physics , quantum mechanics , computer vision
The propagation of defect networks in failed 980 nm emitting high‐power diode lasers is analyzed. This is accomplished ex post facto by electron‐beam based techniques applied without device preparation and in situ by thermographic microscopy with 1 µs time resolution. Moreover, an iterative model is established, which allows for describing both the shape of the observed defect networks as well as the kinetics of their spread. This concerted approach allows the clear assignment of starting points of extended defect systems as well as analysis of their evolution kinetics. Eventually this knowledge may help in making devices more resistive against defect creation and extension.