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Passivation techniques for InAs/GaSb strained layer superlattice detectors
Author(s) -
Plis Elena A.,
Kutty Maya Narayanan,
Krishna Sanjay
Publication year - 2013
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.201100029
Subject(s) - passivation , materials science , optoelectronics , responsivity , superlattice , antimonide , chalcogenide , infrared , leakage (economics) , quantum tunnelling , nanotechnology , optics , layer (electronics) , photodetector , physics , economics , macroeconomics
InAs/(In,Ga)Sb Strained Layer Superlattices (SLSs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. The basic material properties of SLS provide a prospective benefit in the realization of IR imagers with suppressed interband tunneling and Auger recombination processes, as well as high quantum efficiency and responsivity. With scaling of single pixel dimensions, the performance of focal plane arrays is strongly dependent on surface effects due to the large pixels’ surface/volume ratio. This article discusses the cause of surface leakage currents and various approaches of their reduction including dielectric passivation, passivation with organic materials (polyimide or various photoresists), passivation by overgrowth of wider bandgap material, and chalcogenide passivation. Performance of SLS detectors passivated by different techniques and operating in various regions of infrared spectrum has been compared.