Premium
The progress towards terahertz quantum cascade lasers on silicon substrates
Author(s) -
Paul D.J.
Publication year - 2010
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.200910038
Subject(s) - terahertz radiation , cascade , optoelectronics , laser , quantum cascade laser , electroluminescence , quantum , silicon , quantum well , waveguide , materials science , scattering , physics , optics , nanotechnology , chemistry , quantum mechanics , chromatography , layer (electronics)
A review is presented of work over the last 10 years which has been aimed at trying to produce a Si‐based THz quantum cascade laser. Potential THz applications and present THz sources will be briefly discussed before the materials issues with the Si/SiGe system is discussed. Waveguide designs and waveguide losses will be presented. Experimental measurements of the non‐radiative lifetimes for intersubband transitions in Si 1‐x Ge x quantum wells will be presented along with theory explaining the important scattering mechanisms which determine the lifetimes. Examples of p‐type Si/SiGe quantum cascade designs with the experimental electroluminescence will be reviewed and examples of n‐type Si‐based designs will be presented. In the conclusion designs and structures will be discussed with the greatest potential to achieve an electrically pumped Si‐based THz laser.