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ZnCdO/ZnO – a new heterosystem for green‐wavelength semiconductor lasing
Author(s) -
Kalusniak S.,
Sadofev S.,
Puls J.,
Henneberger F.
Publication year - 2009
Publication title -
laser and photonics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.778
H-Index - 116
eISSN - 1863-8899
pISSN - 1863-8880
DOI - 10.1002/lpor.200810040
Subject(s) - lasing threshold , optoelectronics , materials science , ternary operation , laser , semiconductor , wavelength , semiconductor laser theory , molecular beam epitaxy , quantum well , gain switching , optics , epitaxy , nanotechnology , physics , layer (electronics) , computer science , programming language
We report on our efforts to cultivate the ternary compound ZnCdO as a semiconductor laser material. Molecular beam epitaxy far from thermal equilibrium allows us to overcome the standard solubility limit and to fabricate alloys with band gaps ranging from 3.4 down to 2.1 eV. Optimized structures containing well‐defined quantum wells as active zones are capable of low‐threshold lasing under optical pumping up to room temperature. The longest lasing wavelength achieved so far is 510 nm.