
Highly‐Efficient Semiconductor Laser Diodes
Author(s) -
Zorn Martin
Publication year - 2015
Publication title -
laser technik journal
Language(s) - English
Resource type - Journals
eISSN - 1863-9119
pISSN - 1613-7728
DOI - 10.1002/latj.201500004
Subject(s) - laser , materials science , optoelectronics , diode , reliability (semiconductor) , fiber laser , semiconductor , semiconductor laser theory , optics , wavelength , solid state , power (physics) , engineering physics , engineering , physics , quantum mechanics
Semiconductor laser diodes manufactured as laser bars, laser arrays, and single emitters are highly‐desired light sources, e. g. for direct material processing, as pump sources for solid state and fiber lasers or in medical applications. They feature a high output power and efficiency combined with a good reliability resulting in a long‐living device with a low cost of ownership. Desired wavelengths for these applications range from 760 nm, e. g. as replacement for Alexandrite lasers in esthetic skin treatment, up to 1,060 nm for direct material processing and pumping applications.