Premium
The gas‐phase decomposition of methylsilane. Part III. Kinetics
Author(s) -
Sawrey B. A.,
O'Neal H. E.,
Ring M. A.,
Coffey D.
Publication year - 1984
Publication title -
international journal of chemical kinetics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.341
H-Index - 68
eISSN - 1097-4601
pISSN - 0538-8066
DOI - 10.1002/kin.550160106
Subject(s) - chemistry , reaction rate constant , kinetics , shock tube , gas phase , rrkm theory , decomposition , analytical chemistry (journal) , thermodynamics , organic chemistry , shock wave , physics , quantum mechanics
The homogeneous gas‐phase decomposition kinetics of methylsilane and methylsilane‐ d 3 have been investigated by the comparative‐rate‐single‐pulse shock‐tube technique at total pressures of 4700 torr in the 1125–1250 K temperature range. Three primary processes occur: CH 3 SiH 3 → CH 3 SiH + H 2 (1), CH 3 SiH 3 → CH 4 + SiH 2 (2), and CH 3 SiH 3 → CH 2 = SiH 2 + H 2 (3). The high‐pressure rate constants for the primary processes in CH 3 SiH 3 obtained by RRKM calculations are log ( k 1 + k 3 ) (s −1 ) = 15.2 ‐ 64,780 Cal/θ and log k 2 (s − ) = 14.50 ‐ 67,600 → 2800 Cal/θ. For CH 3 SiD 3 these same rate constants are log k 1 (s − ) = 14.99 ‐ 64,700 cal/θ log k 2 (s − ) = 14.68 – 66,700 → 2000 cal/θ, and log k 3 (s − ) = 14.3 ‒ 64,700 cal/θ.