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Kinetics of Silicon Nitride Formation on SiO 2 ‐Derived Rice Husk Ash Using the Chemical Vapor Infiltration Method
Author(s) -
Soltani N.,
Bahrami A.,
PechCanul M. I.,
González L. A.,
Gurlo A.
Publication year - 2017
Publication title -
international journal of chemical kinetics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.341
H-Index - 68
eISSN - 1097-4601
pISSN - 0538-8066
DOI - 10.1002/kin.21075
Subject(s) - chemistry , chemical vapor deposition , husk , silicon nitride , chemical vapor infiltration , silicon , activation energy , adsorption , kinetics , chemical engineering , porosity , organic chemistry , botany , physics , quantum mechanics , engineering , biology
Since silicon nitride coatings on silicon dioxide are attractive for the semiconductor and electronics industries, cognizance of their formation kinetics is crucial for optimization of production parameters. In this contribution, the deposition kinetics (rate constant and activation energy) of Si 3 N 4 by the hybrid system chemical vapor infiltration route (HYSY‐CVI), starting from N 2 :NH 3 and SiF 4 (produced by the decomposition of Na 2 SiF 6 ) has been studied. The deposition rate equation for Si 3 N 4 was established from several possible gas‐phase or surface reaction steps involved in the growth of Si 3 N 4 coatings onto silica‐derived rice husk ash (RHA). Based on a judicious analysis of four different models, it was found that Freundlich's adsorption model satisfactorily represents the rate of Si 3 N 4 deposition process onto RHA.