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High‐temperature kinetics of some Si‐ and Cl‐containing ceramic precursors
Author(s) -
Kunz A.,
Roth P.
Publication year - 2001
Publication title -
international journal of chemical kinetics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.341
H-Index - 68
eISSN - 1097-4601
pISSN - 0538-8066
DOI - 10.1002/kin.1071
Subject(s) - chemistry , kinetics , flash photolysis , shock tube , ceramic , pyrolysis , analytical chemistry (journal) , chemical kinetics , absorption spectroscopy , laser , argon , reaction rate constant , organic chemistry , shock wave , thermodynamics , physics , quantum mechanics , optics
This article summarizes our recent experimental investigations of high‐temperature kinetics of Si‐ and Cl‐containing precursor molecules relevant to chemical vapor synthesis and ceramic processing. Reaction systems using SiCl 4 and SiHCl 3 highly diluted in argon, which were studied in a shock tube using the combination of thermal pyrolysis and laser flash photolysis methods, are described. In situ concentrations of the atomic species Si, Cl, and H were measured simultaneously using the atomic resonance absorption spectroscopy. The measured properties were sensitive to a limited number of elementary reactions, which could be analyzed in terms of rate coefficients. © 2001 John Wiley & Sons, Inc. Int J Chem Kinet 33: 741–754, 2001