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Stress simulation of a foldable active matrix organic light‐emitting diode panel with opening thin film transistor structures based on a finite element unit‐cell model
Author(s) -
Liu Yuanke,
Liao Dunming,
Wu Di,
Jia Yongzhen,
Lee Julian,
Zhang Zhuo
Publication year - 2021
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.988
Subject(s) - materials science , active matrix , amoled , finite element method , bend radius , oled , bending , stress (linguistics) , transistor , thin film transistor , optoelectronics , diode , deformation (meteorology) , light emitting diode , composite material , radius , optics , structural engineering , computer science , electrical engineering , engineering , linguistics , philosophy , physics , computer security , layer (electronics) , voltage
In the bending process of a foldable panel, constrained deformation of patterned structures causes local stress concentrations, which results in the damage of internal components or module stacks. In the present work, a unit‐cell finite element method (FEM) model was used to simulate the bending stress in opening thin film transistor (TFT) structures of a foldable active matrix organic light‐emitting diode (AMOLED) panel. Two different opening methods are compared, and the effect of bending radius is further discussed. The simulation results show that the opening structure can slightly decrease the stress around the hole. The influence of the opening on the stress reduction is gradually increased with the decrease of the bending radius. The simulation results provide the basis for optimizing the TFT structure and improving foldable performance of AMOLED devices.