Premium
Correlation between ion impurity in thermally activated delayed fluorescence organic light‐emitting diode materials and device lifetime
Author(s) -
Inoue Masaru,
Oyabu Noriaki,
Kaneko Yoshiyuki,
Kim JunYun,
Yang JoongHwan
Publication year - 2020
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.922
Subject(s) - materials science , oled , dopant , impurity , optoelectronics , diode , ion , fluorescence , thin film transistor , threshold voltage , voltage , transistor , doping , optics , chemistry , nanotechnology , electrical engineering , physics , organic chemistry , engineering , layer (electronics)
We propose a measurement method of ion impurity amounts of thermally activated delayed fluorescence (TADF) green dopant powders in a solution by applying a triangle voltage waveform and measuring a small displacement current that has been developed for screening and optimization of materials for thin‐film transistor‐liquid crystal displays (TFT‐LCDs). We found that there is a strong correlation between ion impurity and organic light‐emitting diode (OLED) lifetime, and we confirmed that the TADF green dopant, having a large number of ion impurity, has short OLED lifetime.