Correlation between ion impurity in thermally activated delayed fluorescence organic light‐emitting diode materials and device lifetime | Zendy

Inoue Masaru | Zendy; Oyabu Noriaki | Zendy; Kaneko Yoshiyuki | Zendy; Kim JunYun | Zendy; Yang JoongHwan | Zendy

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Correlation between ion impurity in thermally activated delayed fluorescence organic light‐emitting diode materials and device lifetime

Author(s) -

Inoue Masaru,

Oyabu Noriaki,

Kaneko Yoshiyuki,

Kim JunYun,

Yang JoongHwan

Publication year - 2020

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1002/jsid.922

Subject(s) - materials science , oled , dopant , impurity , optoelectronics , diode , ion , fluorescence , thin film transistor , threshold voltage , voltage , transistor , doping , optics , chemistry , nanotechnology , electrical engineering , physics , organic chemistry , engineering , layer (electronics)

We propose a measurement method of ion impurity amounts of thermally activated delayed fluorescence (TADF) green dopant powders in a solution by applying a triangle voltage waveform and measuring a small displacement current that has been developed for screening and optimization of materials for thin‐film transistor‐liquid crystal displays (TFT‐LCDs). We found that there is a strong correlation between ion impurity and organic light‐emitting diode (OLED) lifetime, and we confirmed that the TADF green dopant, having a large number of ion impurity, has short OLED lifetime.

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