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Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane
Author(s) -
Lee Suhui,
Chen Yuanfeng,
Kim Jeonggi,
Jang Jin
Publication year - 2020
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.907
Subject(s) - backplane , amoled , stack (abstract data type) , materials science , thin film transistor , optoelectronics , computer science , layer (electronics) , computer hardware , nanotechnology , operating system , active matrix
Abstract We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high‐resolution organic light‐emitting diode (OLED) displays. The first TFT layer is bulk‐accumulation mode, and the second TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm 2 /Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.