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Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED
Author(s) -
Lee Jaeseob,
Lee Yongsu,
Kang Taewook,
Chu Hyeyong,
Kwag Jinoh
Publication year - 2020
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.883
Subject(s) - materials science , substrate (aquarium) , passivation , thin film transistor , optoelectronics , layer (electronics) , amoled , transistor , threshold voltage , composite material , voltage , electrical engineering , active matrix , oceanography , engineering , geology
This letter investigates the negative‐bias temperature instability (NBTI) behavior of p ‐channel low‐temperature polycrystalline silicon thin‐film transistors (LTPS TFTs) on plastic substrate. The measurements reveal that the threshold‐voltage positive shift is highly correlated to the passivation of grain boundary trap states. By applying the established phenomenon such as NBTI recovery and H diffusion from PI substrate, a new model is introduced to explain the mechanism and verified by the experiment. With the thick buffer and bottom metal layer or newly processed PI substrate, we succeeded in adjusting the NBTI behavior of LTPS TFTs on plastic substrate.