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Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors
Author(s) -
Liu Xianzhe,
Ning Honglong,
Zhang Xu,
Deng Yuxi,
Guo Dong,
Wang Yiping,
Wang Xiaofeng,
Yuan Weijian,
Yao Rihui,
Peng Junbiao
Publication year - 2019
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.849
Subject(s) - materials science , thin film transistor , bend radius , optoelectronics , amorphous solid , thin film , transmittance , doping , band gap , semiconductor , electron mobility , saturation (graph theory) , flexible display , tin oxide , transistor , nanotechnology , bending , layer (electronics) , composite material , electrical engineering , crystallography , mathematics , chemistry , engineering , combinatorics , voltage
The structural, optical, and electrical properties of Si‐doped SnO 2 (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO 2 with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO 2 thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm 2 /Vs, a large I on /I off of 1.44 × 10 7 , and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.