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Bezel free design of organic light emitting diode display via a‐InGaZnO gate driver circuit integration within active array
Author(s) -
Kim Kyung Min,
Han Inhyo,
Noh Seok,
Jang Young In,
Oh Kilhwan,
Kim Bumsik,
Kang InByeong
Publication year - 2019
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.827
Subject(s) - amoled , oled , thin film transistor , active matrix , materials science , optoelectronics , driver circuit , gate driver , electrical engineering , nanotechnology , engineering , layer (electronics) , voltage
In this article, we described an innovative design technology of active matrix organic light emitting diode (AMOLED) display, to provide a bezel free design. We designed gate driver circuit of amorphous indium‐gallium‐zinc oxide thin‐film transistors (TFTs) not on the bezel area but within the active array. Although we applied challengeable design, no degradation of electrical/optical properties of panel was observed. Because we effectively prevented capacitive coupling and interference between the emission circuit and integrated gate driver circuit in active array, finally, we successfully demonstrated a bezel free designed AMOLED display of 18.3″ HD (1366 × 768) driven by a‐InGaZnO TFTs.