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Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting
Author(s) -
Lee Suhui,
Chen Yuanfeng,
Kim Jeonggi,
Kim Hyomin,
Jang Jin
Publication year - 2019
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.823
Subject(s) - thin film transistor , materials science , oxide thin film transistor , optoelectronics , backplane , amoled , active layer , layer (electronics) , transistor , amorphous solid , oxide , nanotechnology , active matrix , electrical engineering , chemistry , crystallography , metallurgy , engineering , voltage
We report stable and high performance amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) by using bulk‐accumulation (BA) and split active/source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm 2 /Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semitransparent AMOLED using the oxide TFT backplane with the gate driver integrated.