Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting | Zendy

Lee Suhui | Zendy; Chen Yuanfeng | Zendy; Kim Jeonggi | Zendy; Kim Hyomin | Zendy; Jang Jin | Zendy

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Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Author(s) -

Lee Suhui,

Chen Yuanfeng,

Kim Jeonggi,

Kim Hyomin,

Jang Jin

Publication year - 2019

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1002/jsid.823

Subject(s) - thin film transistor , materials science , oxide thin film transistor , optoelectronics , backplane , amoled , active layer , layer (electronics) , transistor , amorphous solid , oxide , nanotechnology , active matrix , electrical engineering , chemistry , crystallography , metallurgy , engineering , voltage

We report stable and high performance amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) by using bulk‐accumulation (BA) and split active/source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm 2 /Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semitransparent AMOLED using the oxide TFT backplane with the gate driver integrated.

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