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Integrated gate driver circuit technology with IGZO TFT for sensing operation
Author(s) -
Kim In June,
Noh Seok,
Ban Myung Ho,
Son Kimin,
Han Inhyo,
Shin Hun Ki,
Oh Kilhwan,
Kim Bumsik,
Kang In Byeong
Publication year - 2019
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1002/jsid.785
Subject(s) - thin film transistor , oled , flat panel display , gate oxide , gate driver , materials science , integrated circuit , computer science , transistor , diode , electronic circuit , optoelectronics , and gate , logic gate , electrical engineering , process (computing) , nanotechnology , engineering , voltage , layer (electronics) , operating system
Abstract In this paper, we propose a new integrated gate driver circuit for random sensing operation of external compensated organic light‐emitting diode (OLED) display using oxide thin‐film transistor (TFT). Using this technology, we successfully launched 55‐inch and 65‐inch ultrahigh definition OLED TVs with gate in panel (GIP) circuit. The structure of the existing OLED TVs implemented gate signals through the gate integrated circuits (ICs) attached to the left and right sides of the panel. The structure using the gate IC was inferior to the panel structure using the GIP in terms of process and product design and cost. Thus, we propose a new oxide GIP circuit for OLED TV. Like the previous gate IC model, the proposed GIP circuit successfully implemented the random sensing function during the display operation. This GIP circuit is also designed to overcome the problems caused by the negative Vth characteristics of the oxide device.